Porous ZnO Semiconductors Obtained Through A Sacrifice Phase

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Abstract
06-011 Lucca Monteiro Silva Semensato Semensato, L.M.(Universidade Federal de Alfenas); Maestrelli, S.C.(Universidade Federal de Alfenas); Mancini, M.H.(Universidade Federal de Alfenas); Estorari, L.F.(Universidade Federal de Alfenas); Storion, A.G.(Universidade Federal de Alfenas); Faria, F.d.(Universidade Federal de Alfenas); Nano semiconductors have shown an enormous potential of application into dyes degradation on water purification through Advanced Oxidative Processes (AOPs), called photocatalysis. The photocatalytic activity of the semiconductors starts with the incidence of energy as radiation, so that electrons can overcome the band gap and start the oxidative reactions. Many studies have shown the great potential of ZnO based semiconductors on photocatalytic applications; however, most of these papers works only with nanocrystalline powders, and not with solid samples, which require an optimization regarding mechanical resistance and porosity. Thus, this paper aimed the production of pressed bodies of ZnO with a polymeric sacrifice phase. Green pieces of ZnO were uniaxially pressed at 671.82 and 1023.31 kgf/cm² using 70% of ZnO and 30% of PET polymer with grain size of 1.18mm. 10% of carboxymethyl cellulose and 10% of water were added to the solids total mass. The material was sintered at 800 and 900°C for 2 hours using 1°C/min heating rate. After sintering, the physic and photocatalytic properties of the samples were measured. The results showed that the technique used led to pieces with high porosity, adequate mechanical resistance and good photocatalytic properties. The authors thank FAPEMIG and CAPES for the financial support to this research.
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