Fabrication and characterization of BaFe12O19 thin films by physical sputtering for magnetoelectric composites

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Abstract
08-030 Vinicius Pretti Rossi Rossi, V.P.(Universidade Federal de São Carlos); Zabotto, F.L.(Universidade Federal de São Carlos); Garcia, D.(Universidade Federal de São Carlos); Eiras, J.A.(Universidade Federal de São Carlos); Gonçalves, A.M.(Universidade Federal de São Carlos); Bonini, R.P.(Universidade Federal de São Carlos); Nanostructured multifunctional systems have been widely studied, due to the application potential of their properties. In particular, valuable phenomena are observed in ceramic thin films, opening a considerably recent area to the Condensed Matter Physics, that must understand some exclusive processes regarding the bidimensionality of these systems. In this work, the obtention of BaFe12O19 (BaM) target and the fabrication of thin films by physical route through radio-frequency sputtering will be presented. The investigation of thermal parameters needed to produce a stoichiometric target and analyse the influence of some sputtering variables over the stoichiometry, phase formation, orientation and thickness of the films were carried out. Early measurements pointed out that deposition time and power have no effect over stoichiometry, producing films with satisfying Fe/Ba rate confirmed by EDX analysis and thickness from 100 nm to 300 nm. With increasing thickness, x-ray diffraction showed that annealing time must be increased to guarantee complete formation of BaM. Orientation of the Si substrate showed to be essentially vinculated with in-plane orientation of BaM crystals. Both Si (100) and (111) substrates privileged in-plane orientation of the c-axis of BaM and atomic force microscopy found needle-like grains spreaded randomly onto substrate.
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