Synthesis and deposition of graphene films reduced with nitrogen

Reference Presenter Authors
(Institution)
Abstract
08-098 Melyssa Freitas Melo Melo, M.F.(Universidade Federal do ABC); Sparvoli, M.(Universidade Federal do ABC); Graphene is currently one of the most promising nanomaterials in the world, due to its excellent electrical, thermal and optical properties. Graphene is considered to be the basis of the whole family of carbon materials, with the exception of diamond. When the material is doped, in case graphene oxide (GO), its electrical, optical, magnetic and structural characteristics are modified. They can be improved or only directed towards a particular purpose. This work consists in deposition of GO thin films by dip coating, followed by reduction by conventional oven annealing with nitrogen atmosphere. The incorporation of nitrogen in graphene oxide promotes changes in electrical characteristics of material. This result allows the thin films produced to be applied in the manufacture of photosensitive sensors. The change in the mode of annealing of the material provides possible large changes in the properties of the material and consequently in its application, which reflects the differential of this project. Four samples (GO, rGO350, rGO450, rGO550) were analyzed in according to their optical, structural and electrical properties with hall effect technique, UV-Vis spectroscopy, raman and four probe point. In hall effect analysis reduced graphene oxide thin films showed low resistivity. Through this, it is concluded that the reduced graphene oxide has a very promising future for the production of electronic devices.
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