Study of the reduced graphene oxide (rGO) thin films properties obtained from different processes

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Abstract
08-118 Marina Sparvoli Sparvoli, M.(Universidade Federal do ABC); Monteiro, J.F.(Universidade Federal do ABC); Silva, M.F.(Universidade Nacional de Brasilia); Ideyama, R.H.(Universidade Federal do ABC); Munaro, G.(Universidade Federal do ABC); Comarin, P.(Universidade Federal do ABC); Graphene is currently one of the most promising nanomaterials in the world, due to its excellent electrical, thermal and optical properties. Graphene is considered to be the basis of the whole family of carbon materials, with the exception of diamond. When the material is doped, in case graphene oxide (GO), its electrical, optical, magnetic and structural characteristics are modified. They can be improved or only directed towards a particular purpose. The objective of this research was the deposition of pure graphene oxide, reduced GO (rGO) and GO doped with nitrogen thin films and their morphological, optical and electrical characterization, looking for application in photovoltaic devices. In this work, production process is simple, efficient and inexpensive. It can be done with low-cost equipment that can be build by the researcher. Moreover, due to the simplicity, the reproducibility of the material can be made on a large scale. The dip coating apparatus basically consists of a clamp which holds the substrate is dipped in a GO solution (graphene oxide). For samples obtention, cleaning was performed in five glass samples with sulfuric acid and hydrogen peroxide, followed by deposition of thin films by dip-coating method where were formed six layers, reducing films (rGO) with hydrobromic or hydriodic acid at 200 degrees and, subsequently, the annealing process in nitrogen was conducted with temperature 200 degrees. The five samples (GO, rGOHI, rGOHBr, rGOHBr 200 degrees and rGOHI 200 degrees) were analyzed in according to their optical, structural and electrical properties with hall effect technique, UV-Vis spectroscopy, raman and four probe point. In hall effect analysis reduced graphene oxide thin films showed low resistivity. Through this, it is concluded that the reduced graphene oxide has a very promising future for the production of electronic devices, since it makes them ultra effcient and more advanced than the current.
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